Options
1984
Journal Article
Titel
E-beam metrology of chromium master masks and masks for x-ray lithography
Titel Supplements
Proceedings of the International Symposium on Electron, Ion and Photon Beams, Tarrytown/N.J.
Abstract
Mask fabrication is a key technology for x-ray lithography which could limit the size of future step and repeat fields used for x-ray exposure. This paper deals with distortions induced by single process steps during mask fabrication. To control the positional accuracy of the microstructures after different fabrication steps the e-beam metrology tool EBMT-5 has been used. Average distortions as low as 0.12 mym were found in a 40 mm x 40 mm field for the thinning process of the Si-wafer to form the 2 mym thick mask membrane on a three inch wafer. This result was achieved after stress compensation of the Si-membrane. (IMT)