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E-beam metrology of chromium master masks and masks for x-ray lithography

Proceedings of the International Symposium on Electron, Ion and Photon Beams, Tarrytown/N.J.
: Betz, H.; Heuberger, A.; Bruenger, W.H.; Mueller, K.P.

Journal of vacuum science and technology B. Microelectronics and nanometer structures 2 (1984)
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
Journal Article
Fraunhofer IFT; 2000 dem IZM eingegliedert
Hochintegration; Lithographie; Maske; Röntgenstrahlen

Mask fabrication is a key technology for x-ray lithography which could limit the size of future step and repeat fields used for x-ray exposure. This paper deals with distortions induced by single process steps during mask fabrication. To control the positional accuracy of the microstructures after different fabrication steps the e-beam metrology tool EBMT-5 has been used. Average distortions as low as 0.12 mym were found in a 40 mm x 40 mm field for the thinning process of the Si-wafer to form the 2 mym thick mask membrane on a three inch wafer. This result was achieved after stress compensation of the Si-membrane. (IMT)