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E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits

Elektronenstrahl Direktschreiben in einem trockengeätzten Recess-Gate Prozess für GaAs/AlGaAs Schaltungen

Applied Physics Letters 29 (1990), No.10, pp.2317-2320 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
electron beam lithography; Elektronenstrahllithographie; GaAs/AlGaAs; HEMT

We developed a technology to fabricate enhancement and depletion high electron mobility transistors (E- and D-HEMTs) with sub-0.5 Mym gatelengths using e-beam direct-write lithography. The gates are recessed by dry etching. The recess is stopped on 30 A AlGaAs layers for E- and D-field effect transistors (FETs) respectively. We have extensively investigated the double layer resist technique for direct-write to improve the reliability of 0.3 Mym electron-beam (E-beam) lithography. Ring oscillators using direct coupled FET logic (DCFL) have been measured indicating delay times of 16 ps per stage.