• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. E-beam application of highly sensitive positive and negative-tone resists for x-ray mask making
 
  • Details
  • Full
Options
1989
Conference Paper
Title

E-beam application of highly sensitive positive and negative-tone resists for x-ray mask making

Abstract
Resist sensitivity is one of the limiting factors in X-ray as well as e-beam lithography. To overcome the rather low sensitivities of commonly used resist like PMMA, a positiv-tone X-ray resist ("RAY-PF") has been recently developed, which makes use of the concept of chemical "amplification". Since a novolak is included as a binder matrix, development can be performed by aqueous alkaline solutions, e.g. RAZ-Developer. Replacement of the dissolution inhibitor in RAY-PF by a chemical crosslinker yields a negative-tone resist ("RAY-PN") with very similar processing. The present investigation refers to the application of both resist types, originally designed to meet the demands of X-ray mask fabrication.
Author(s)
Dammel, R.
Demmeler, R.
Ehrlich, C.
Hessemer, W.
Kohlmann, K.
Lingnau, J.
Pongratz, S.
Reimer, K.
Scheunemann, U.
Theis, J.
Mainwork
Electron-beam x-ray and ion-beam technlogy. Submicrometer lithographies VIII  
Conference
Society of Photo-Optical Instrumentation Engineers (Conference) 1989  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024