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E-beam application of highly sensitive positive and negative-tone resists for x-ray mask making

: Dammel, R.; Demmeler, R.; Ehrlich, C.; Hessemer, W.; Kohlmann, K.; Lingnau, J.; Pongratz, S.; Reimer, K.; Scheunemann, U.; Theis, J.

Yanof, A.W. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Electron-beam x-ray and ion-beam technlogy. Submicrometer lithographies VIII : 1-3 March 1989, San Jose, California
Bellingham, Wash.: SPIE, 1989 (Proceedings of SPIE 1089)
ISBN: 0-8194-0124-2
Society of Photo-Optical Instrumentation Engineers (Conference) <1989, San Jose/Calif.>
Conference Paper
Fraunhofer ISIT ()

Resist sensitivity is one of the limiting factors in X-ray as well as e-beam lithography. To overcome the rather low sensitivities of commonly used resist like PMMA, a positiv-tone X-ray resist ("RAY-PF") has been recently developed, which makes use of the concept of chemical "amplification". Since a novolak is included as a binder matrix, development can be performed by aqueous alkaline solutions, e.g. RAZ-Developer. Replacement of the dissolution inhibitor in RAY-PF by a chemical crosslinker yields a negative-tone resist ("RAY-PN") with very similar processing. The present investigation refers to the application of both resist types, originally designed to meet the demands of X-ray mask fabrication.