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The dynamics of the H-CAs complex in GaAs studied by raman spectroscopy

Das Schwingungsverhalten des H-CAs Komplexes in GaAs untersucht mittels Ramanspektroskopie

Lockwood, D.J.:
22nd International Conference on the Physics of Semiconductors 1995. Vol. 3
Singapore: World Scientific, 1995
ISBN: 981-02-2980-1
pp.2323-2326 : Abb.,Lit.
International Conference on the Physics of Semiconductors <22, 1995, Vancouver>
Conference Paper
Fraunhofer IAF ()
carbon doping; GaAs; Kohlenstoffdotierung; local vibrational modes; lokale Schwingungsmoden; raman spectroscopy; Ramanspektroskopie

The LVMs on the H-CdeepAs complex have been measured by Raman spectroscopy on highly carbon doped epitaxial GaAs layers for all four isotopic combinations involving high12C,high13c H and D. A complete set of LVM frequencies is obtained including the so far missing hydrogen-like E-mode for both Hminushigh12/13CdeepAS isotopic combinations. The assignment of the various observed Raman lines to specific modes in confirmed by polarization dependent Raman measurements which allow the mode symmetries to be determined. Of the four different eigenmodes of the H-CdeepAs complex, the low-frequency Adeep1-mode is the only one to show an exceptionally strong resonance enhancement in its scattering strength for incident photon energies of =3eV.