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DUV resist UV II HS applied to high resolution e-beam lithography and to masked ion beam proximity and reduction printing

: Brünger, W.H.; Buschbeck, H.; Cekan, E.; Eder, S.; Fedynyshyn, T.H.; Hertlein, W.G.; Hudek, P.; Kostic, I.; Loeschner, H.; Rangelow, J.W.; Torkler, M.

Hatzakis, M.:
Micro- and nanoengineering 97 - MNE. Proceedings of the International Conference on Micro- and Nanofabrication 1997
Amsterdam: Elsevier, 1998 (Microelectronic engineering 41/42.1998)
International Conference on Micro- and Nanofabrication (MNE) <1997, Athen>
Conference Paper
Fraunhofer ISIT ()

The positive DUV-resist UV II HS from Shipley has been evaluated for 30 keV e-beam and 75 keV H+ ion exposure. In the case of electrons, the large area sensitivity of this chemically amplified resist was 5 mu C/cm2. 100 nm wide lines could be delineated into 1 mu m thick resist. Pattern transfer into SiO2 was possible with an SiO2/resist etch selectivity of >5. In the case of H+ ion exposure of the UV II HS-0.6 resist, the sensitivity was 0.15 mu C/cm2, which corresponds to 1*1012 H+ ions/cm2. With 8.4* demagnification of the mask, the ion projector in the Berlin facility could expose 80 nm wide features in 370 nm thick resist with an exposure latitude of +or-10%. The 1:1 ion beam proximity printer at IMS, Vienna delineated the smallest mask features (1 mu m) over a mask to wafer gap of 1 mm with <5 nm pattern widening for +or-10% overexposure.