Dry etching and micromachining of precision Silicon components

Dry etching and micromachining with laser radiation of short wavelength and pulse length are investigated to present their process capabilities for the production of surface structures within precision Silicon components. The laser dry etching processing (CCl4) with Excimer laser radiation (lambda L=248 nm, tauta L=20 ns) is modified by using a microwave-excited processing gas (CF4). Furthermore, methylmethacrylate is additionally used to study the influence of polymerisation on the etched structures. The micromachining with frequency-doubled Nd:YLF laser radiation (lambda L=527 nm, tauta L=30 ps) is performed yielding more precise structures during drilling and caving due to the lower heat and pressure load during the interaction time. The processes involved in dry etching and micromachining with laser radiation are studied by high-speed photography, mass spectroscopy and optical spectroscopy, whereas the produced structures are analyzed by profilometry, optical and electron microscop y as well as electron spectroscopy such as XPS and AES. The results are discussed in view of applications for surface patterning of precision Silicon components.