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Dopant incorporation in Si-implanted and thermally annealed GaAs.

Dotierstoffeinbau in Si-implantiertem und thermisch ausgeheiltem GaAs
: Jantz, W.; Seelewind, H.; Wagner, J.


Journal of applied physics 67 (1990), No.4, pp.1779-1783
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()
doped GaAs; dotiertes GaAs; LVM-spectroscopy; Si-implantation

The incorporation of Si in ion-implanted and thermally annealed GaAs has been studied by local vibrational mode spectroscopy. Raman scattering and Fourier transform IR absorption have been used to analyze the Si site distribution both in the near surface region and averaged over the whole implanted layer, respectively. The samples implanted with doses of 5x10 high 14 - 10 high 16 cm high -2 were annealed with various techniques using different capping layers. The Si site distribution is found to depend strongly on the details of the annealing. In particular, capping with SiO sub 2 leads to the formation of the so-called Si-X defect complex in addition to the incorporation of Si on both lattice sites and the formation of nearest-neighbor Si pairs.