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Dopant incorporation in delta-doped GaAs layers studied by local vibrational mode spectroscopy

Dotierungseinbau in Delta-dotierten GaAs-Schichten untersucht mittels Spektroskopie lokalisierter Schwingungsmoden
: Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.

Ikoma, T.:
Gallium arsenide and related compounds 1989. Proceedings
Bristol, 1990 (Institute of Physics - Conference Series 106)
ISBN: 0-85498-065-2
pp.465-470 : Abb.,Lit.
International Symposium on Gallium Arsenide and Related Compounds <16, 1989, Karuizawa>
Conference Paper
Fraunhofer IAF ()
delta-doping; Delta-Dotierung; doped GaAs; dotiertes GaAs; local vibrational spectroscopy; Spektroskopie lokalisierter Schwingungsmoden

Raman scattering by local vibrational modes (LVM) is demonstrated to allow a direct assessment of Si or Be incorporation in single delta-doped GaAs layers. Placing the Si doping spike at different depths underneath the sample surface a strongly asymmetric Si sub Ga depth profile, probably due to segregation, is obtained by this Raman scattering method. In addition electronic Raman scattering data are reported which also indicate a considerable broadening of the doping spike.