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  4. Distributed Bragg reflector lead-tin-selenide/lead-europium-tin-selenide diode lasers with a broad single-mode tuning range.
 
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1988
Journal Article
Title

Distributed Bragg reflector lead-tin-selenide/lead-europium-tin-selenide diode lasers with a broad single-mode tuning range.

Other Title
Blei-Zinn-Selenid Blei-Europium-Zinn-Selenid-Diodenlaser mit verteiltem Bragg-Reflektor und weitem Ein-Moden-Abstimmbereich
Abstract
Distributed Bragg reflector Lead-Tin-Selenide/Lead-Europium-Tin-Selenide double heterostructure stripe geometry diode lasers were fabricated using molecular-beam epitaxy. Single-mode cw operation at about 7.8 mym was obtained for heat-sink temperatures in the range 25-75 K. The single-mode continuous tuning range was 10 cm E-1. Tuning the diodes via the injection current, a range of 24 cm E-1 was completely covered with single-mode emission. The reason for this wide tuning range was mode hopping to lower frequencies rather than the usual hopping to higher frequencies. (IPM)
Author(s)
Shani, Y.
Rosman, R.
Norton, P.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Katzir, A.
Preier, H.M.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Tacke, M.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
Journal of applied physics  
DOI
10.1063/1.340341
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • Bleichalkogenid

  • Infrarot-Diodenlaser

  • Molekularstrahlepitaxie

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