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Dissipative tunneling in asymmetric double-quantum-well system. A coherence phenomenon

Dissipatives Tunneln in asymmetrischen Doppel-Quantum well Systemem. Ein Kohärenzphänomen
 
: Vaupel, H.; Thomas, P.; Kühn, O.; May, V.; Maschke, K.; Heberle, A.P.; Rühle, W.W.; Köhler, K.

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Physical Review. B 53 (1996), No.24, pp.16531-16542
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
English
Journal Article
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; quantum wells

Abstract
Recent experiments on asymmetric double-quantum-well systems revealed unexpected long time scales of resonant tunnel processes as well as deviations from the expected dependence of the tunneling lifetime T on the barrier thickness. Both effects are related to the presence of dissipative processes. Starting from microscopic expressions for T beyond the usual golden rule approach we show that the observed behavior is a consequence of Fano interference, which implies that low-temperature dissipative tunneling can be treated as a totally coherent process. Including disorder due to interface roughness, these Fano interferences lead to a nonexponential and slowed-down decay.

: http://publica.fraunhofer.de/documents/PX-10041.html