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2K PL topography of silicon doped VGf-GaAs wafers

2K PL Topographie an siliziumdotierten VGF-GaAs Scheiben
: Baeumler, M.; Maier, M.; Herres, N.; Bünger, T.; Stenzenberger, J.; Jantz, W.


Materials Science and Engineering, B. Solid state materials for advanced technology 91-92 (2002), pp.16-20
ISSN: 0921-5107
Journal Article
Fraunhofer IAF ()
photoluminescence topography; Photolumineszenztopographie; VGF-GaAs; silicon; Silizium; x-ray topography; Röntgenstrahltopographie; dislocation; Versetzung; semiconductor; Halbleiter

We report on full wafer and small area photoluminescence topography investigations of VGF GaAs:Si wafers. The wavelength-specific images exhibit various correlations and anti-correlations. Intensity variations due to competitive radiative and non-radiative recombination processes are mainly due to stoichiometric fluctuations and can be distinguished from those generated by the variation of the silicon dopant concentration. X-ray transmission topograms allow to identify grown-in defects like precipitates and dislocations and to correlate these with the observed macro- and microscopic luminescence variation patterns.