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Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers

Neuere Entwicklungen bei kurzwelligen MIR-Halbleiterscheibenlasern mit hoher Ausgangsleistung
: Burns, D.; Hopkins, J.-M.; Kemp, A.J.; Rösener, B.; Schulz, N.; Manz, C.; Köhler, K.; Rattunde, M.; Wagner, J.


Clarkson, W.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Solid State Lasers XVIII. Technology and devices : 25-29 January 2009, San Jose, California, United States
Bellingham, WA: SPIE, 2009 (SPIE Proceedings Series 7193)
ISBN: 978-0-8194-7439-1
ISBN: 978-0-8194-7484-1
ISSN: 0277-786X
Paper 719311
Conference "Solid State Lasers - Technology and Devices" <18, 2009, San Jose/Calif.>
Conference Paper
Fraunhofer IAF ()
Halbleiterscheibenlaser; VECSEL; GaSb; mittleres Infrarot; hohe Brillianz; semiconductor disc laser; mid infrared; high brightness

Many applications exist for high performance lasers in the short-wave, mid-infrared spectral regime between 1.9 and 2.5µm - from long-range communications systems through to remote atmospheric gas sensing and pollution monitoring. However, a simple, efficient laser source offering the desired performance characteristics and flexibility has not been available. In the last few years considerable progress has been made in the development of optically-pumped (AlGaIn)(AsSb) quantum well semiconductor disk lasers emitting in the 2.Xµm mid-infrared spectral region - continuous-wave and pulsed-pumped output power levels now exceed 6W and 16W respectively. Furthermore, singlefrequency operation with linewidths <4MHz and broad tunability of up to 170nm have also been demonstrated, all at near-diffraction-limited beam quality. Such performance metrics are only possible through the very best materials growth, a sound understanding of the design principles of these highly multi-layered devices and, importantly, the application of effective thermal management.