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Challenges for multi-scale modeling of multiple failure modes in microelectronics packaging

: Auersperg, J.; Dudek, R.; Vogel, D.; Michel, B.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
EPTC 2008, 10th Electronics Packaging Technology Conference : 9th-12th December 2008, Singapore
New York, NY: IEEE, 2008
ISBN: 978-1-4244-2117-6
ISBN: 978-1-4244-2118-3
Electronics Packaging Technology Conference (EPTC) <10, 2008, Singapore>
Conference Paper
Fraunhofer ENAS ()
Fraunhofer IZM ()

Design for thermo-mechanical reliability of electronics components on the basis of parameterized Finite Element Models and DoE/RSM-approaches (Design of Experiments/Response Surface Methods) are more and more performed for optimizations at early phases of the product development process. This is especially the case for electronic components in the fields of RF (Radio Frequency), optoelectronics, high temperature, and power applications, which are often exposed to extreme thermal environmental conditions, mechanical shock and vibrations. Additionally, a continuous industry drive for miniaturization and function integration forces the development of feature sizes down to the nanometer range and the introduction of new high-tech, nano-particle filled or nano-porous materials. These developments cause new challenges for reliability analysis and prediction, i.e. the development of multiple failure criteria for combined loadings including residual stresses, interface delamination, cracking and fatigue of interconnects simultaneously. That's why, the authors face up to multiscale modeling approaches, damage and fracture mechanics approaches on the basis of continuum mechanics, and measurement techniques of material properties in the miniaturized range addressed. Evaluations of residual stresses, especially of thin films, resulting from several manufacturing steps are an important precondition for high-quality FEA-based RSM/DOE-simulations towards robust designs, too.