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Electro-thermal SPICE model for high-voltage SiC VJFETs

: Elpelt, R.; Friedrichs, P.; Hippeli, J.; Schörner, R.; Treu, M.; Türkes, P.

Amador Pérez, T.:
Silicon carbide and related materials 2008 : ECSCRM 2008, selected, peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7 - 11, Barcelona, Spain
Stäfa-Zürich: Trans Tech Publications, 2009 (Materials Science Forum 615-617)
ISBN: 0-87849-334-4
ISBN: 978-0-87849-334-0
European Conference on Silicon Carbide and Related Materials (ECSCRM) <7, 2008, Barcelona>
Conference Paper
Fraunhofer IISB ()

After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device Structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.