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Influence of growth rate and C/Si-ratio on the formation of point and extended defects in 4H-SiC homoepitaxial layers investigated by DLTS

: Zippelius, B.; Krieger, M.; Weber, H.B.; Pensl, G.; Kallinger, B.; Friedrich, J.; Thomas, B.


Amador Pérez, T.:
Silicon carbide and related materials 2008 : ECSCRM 2008, selected, peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7 - 11, Barcelona, Spain
Stäfa-Zürich: Trans Tech Publications, 2009 (Materials Science Forum 615-617)
ISBN: 0-87849-334-4
ISBN: 978-0-87849-334-0
European Conference on Silicon Carbide and Related Materials (ECSCRM) <7, 2008, Barcelona>
Conference Paper
Fraunhofer IISB ()

4H-SiC epilayers are homoepitaxially grown on 4H-Sic substrates with different C/Si-ratios and different growth rates by the chemical vapour deposition method. DLTS investigations are applied in order to trace energetically deep states of electrically active point defects and extended defects, which may act as the Source for the degradation of electronic devices. In addition, the dependence of the DLTS signal heights on the filling pulse length is studied.