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Large-area homoepitaxial growth of low-doped thick epilayers for power devices with VBR > 4 kV

: Thomas, B.; Hecht, C.; Kallinger, B.


Amador Pérez, T.:
Silicon carbide and related materials 2008 : ECSCRM 2008, selected, peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7 - 11, Barcelona, Spain
Stäfa-Zürich: Trans Tech Publications, 2009 (Materials Science Forum 615-617)
ISBN: 0-87849-334-4
ISBN: 978-0-87849-334-0
European Conference on Silicon Carbide and Related Materials (ECSCRM) <7, 2008, Barcelona>
Conference Paper
Fraunhofer IISB ()

In this paper we present results on the growth of low-doped thick erpitaxial layers on 4 degrees off-oriented 4H-SiC using a commercially available hot-wall multi-wafer CVD system. For the First time we show results of a low-doped full-loaded 7x3 '' run on 4 degrees off-oriented Substrates with a layer thickness of more than 70 mu m. The target doping concentration of 1.2 x 10(15) cm(-3) Suitable for blocking voltages > 6 kV. Results on doping, thickness and wafer-to-wafer homogeneities are shown. The surface quality of the grown layers was characterized by AFM. The density of different types of dislocations was determined by Defect Selective Etching.