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Carrier mass measurements in degenerate indium nitride

Messungen von Masse der Ladungsträger in entartetem Indiumnitrid
: Pettinari, G.; Polimeni, A.; Capizzi, M.; Blokland, J.H.; Christianen, P.C.M.; Maan, J.C.; Lebedev, V.; Cimalla, V.; Ambacher, O.


Physical Review. B 79 (2009), No.16, Art. 165207, 5 pp.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Journal Article
Fraunhofer IAF ()
effektive Masse; Elektronendichte; III-V Halbleiter; InN; Landau-level; Photolumineszenz; Halbleiterdotierung; Halbleiter mit großer Bandlücke; III-V semiconductor; photoluminescence

We present photoluminescence measurements under intense magnetic fields (B up to 30 T) in n-doped indium nitride samples with carrier concentration ranging from about 7.5x10(17) cm(-3) to 5x10(18) cm(-3). The observation of transitions involving several Landau levels permits to determine the carrier-reduced mass mu around the Gamma point. Depending on the carrier concentration, we find mu ranging between 0.093m(0) and 0.107m(0) (m(0) is the electron mass in vacuum). This finding poses a lower limit to the electron effective mass, whose unexpectedly large value (m(e)>= 0.093m(0)) indicates that the sources of n doping in InN perturb strongly the crystal conduction band near its minimum.