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Microscopic homogeneity of emitters formed on textured silicon using in-line diffusion and phosphoric acid as the dopant source

: Voyer, C.; Buettner, T.; Bock, R.; Biro, D.; Preu, R.


Kondo, M.:
17th International Photovoltaic Science and Engineering Conference, PVSEC 2007 : Fukuoka, Japan, 3 - 7 December 2007
Amsterdam: Elsevier, 2009 (Solar energy materials and solar cells 93.2009, Nr.6-7)
ISSN: 0927-0248
International Photovoltaic Science and Engineering Conference (PVSEC) <17, 2007, Fukuoka>
Conference Paper, Journal Article
Fraunhofer ISE ()

An important point of comparison between POCl3 emitter diffusion in a quartz tube furnace and in-line diffusion using sprayed phosphoric acid is the microscopic homogeneity of the diffusion, i.e. the homogeneity along the texture of a silicon surface. Two characterization methods were used. In each case, the cross-section of cleaved mc-Si and Cz-Si textured samples was observed in a scanning electron microscope (SEM). First, the thickness of the phosphosilicate glass (PSG) was measured. Second, the emitter was observed on SEM images which showed the n-type silicon as a darker region. The results show comparable homogeneity for in-line and POCl3 diffusion.