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Verfahren zum Verbinden zweier Fuegeflaechen

Connecting two joining surfaces of a component in the field of semiconductors, comprises producing a joining surface by depositing a layer of gold and silver onto a substrate and selectively removing the silver from the deposited layer
 
: Oppermann, H.

:
Frontpage ()

DE 102007055017 A: 20071114
DE 102007055017 A: 20071114
B82B0003
B81C0003
B81B0001
H01L0021
C25D0003
C23C0014
German
Patent
Fraunhofer IZM ()

Abstract
(A1) Es wird ein Verfahren zum Verbinden zweier Fuegeflaechen, insbesondere in der Halbleitertechnik vorgeschlagen, bei dem mindestens eine Fuegeflaeche durch Abscheiden einer Schicht, bestehend aus 20 bis 40% Gold und 80 bis 60% Silber, auf einen Traeger und selektives Entfernen des Silbers aus der abgeschiedenen Schicht zur Erzeugung einer nanoporoesen Goldschicht als Fuegeflaeche hergestellt wird. Die Fuegeflaeche mit nanoporoeser Goldschicht und eine weitere Fuegeflaeche werden uebereinander angeordnet und zusammengepresst.

 

WO 2009062757 A1 UPAB: 20090604 NOVELTY - The method for connecting two joining surfaces of a component in the field of semiconductors, comprises producing a joining surface by depositing a layer comprising 20-40% of gold and 80-60% silver onto a substrate (1, 1') and selectively removing the silver from the deposited layer through electrolytic reversal of the galvanic deposition or through etching of silver to produce a nanoporous gold layer (4, 4') as a joining surface, disposing the joining surface with the nanoporous gold layer and an additional joining surface one above the other and then pressing together. DETAILED DESCRIPTION - The method for connecting two joining surfaces of a component in the field of semiconductors, comprises producing a joining surface by depositing a layer comprising 20-40% of gold and 80-60% silver onto a substrate (1, 1') through evaporation or sputtering in galvanic or electrochemical manner and selectively removing the silver from the deposited layer through electrolytic reversal of the galvanic deposition or through etching of silver to produce a nanoporous gold layer (4, 4') as a joining surface, disposing the joining surface with the nanoporous gold layer and an additional joining surface one above the other and then pressing together. The nanoporous gold layer is subjected on a layer formed out of gold and is deposited on wafer with microelectronic control or microelectronic elements. The further joining surface is formed with the nanoporous layer. A pasty or fluid connection means is applied on the joining surface and is equipped with thermal and/or electrical conductive filling particles. Lubricants, gel and/or heat conducting paste is applied on the joining surface. The nanoporous gold layer is structured and the joining surface is heated. The heating is carried out before, during and/or after the pressing under application of pressure. The joining surfaces are vertically and/or horizontally subjected under application of pressure with ultrasonic. The connection means is polymerized, cross-linked and hardened. The nanoporous gold layer is pretreated through reactive ion etching or hydrophilizing for better wetting. A plating base (2) is subjected with adhesive layer before the deposition of the silver and gold layer on the carrier. The plating base or adhesive layer is lithographically structured. A lacquer mask used for structuring the layer of gold and silver is removed before or after the removal of the silver. The nanoporous gold layer is annealed for adjusting the pore size. An INDEPENDENT CLAIM is included for a component with two joining surfaces to be connected. USE - The method for connecting two joining surfaces of a component in the field of semiconductors useful in microelectronics, micromechanics and micro-optics. ADVANTAGE - The method ensures connecting of two joining surfaces of a component with high strength and compressibility.

: http://publica.fraunhofer.de/documents/N-95817.html