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Title
Verfahren zum Herstellen einer nanoporoesen Schicht
Date Issued
2007
Author(s)
Oppermann, H.
Dietrich, L.
Engelmann, G.
Wolf, J.
Patent No
102007055019
Abstract
(A1) Es wird ein Verfahren zur Herstellung einer nanoporoesen Schicht vorgeschlagen, bei dem eine Schicht aus Gold und Silber auf einen Traeger abgeschieden wird, wobei die Zusammensetzung im Bereich von 20% bis 40% Gold und 80% bis 60% Silber liegt. Anschliessend wird das Silber zur Erzielung einer nanoporoesen Goldschicht selektiv entfernt.
WO 2009062754 A1 UPAB: 20090604 NOVELTY - The method for producing a nanoporous layer (4) for the modification of surfaces on microelectronic and micromechanical semiconductor wafer, comprises sputtering a plating base (2) with adhesive layer on a carrier, subjecting a photosensitive lacquer and then structuring for producing a lacquer mask, galvanically depositing a layer (3) of gold and silver in electrolytes under applying a voltage and selectively removing the silver to obtain a nanoporous gold layer, and removing the lacquer mask before or after the deposition. DETAILED DESCRIPTION - The method for producing a nanoporous layer (4) for the modification of surfaces on microelectronic and micromechanical semiconductor wafer, comprises sputtering a plating base (2) with adhesive layer on a carrier, subjecting a photosensitive lacquer and then structuring for producing a lacquer mask, galvanically depositing a layer (3) of gold and silver in electrolytes under applying a voltage and selectively removing the silver to obtain a nanoporous gold layer, removing the lacquer mask before or after the deposition, structuring a second lacquer mask for the protection of nanoporous gold layer, etching the plating base and removing the second lacquer mask. The composition of the layer has 20-40% of gold and 80-60% of silver. The nanoporous gold layer is produced on wafers with microelectronic control or micromechanical elements. The deposition of the gold and silver layer is carried out through vapor deposition or sputtering. The plating base or the adhesive layer is lithographically structured. The selective removal of the silver is carried out through electrolytic reversal of galvanic deposition or through etching of silver. The silver is alloyed and the adhesive layer is removed without masking the nanoporous gold layer by a second lacquer mask in a suitable watery solution. The nanoporous gold layer is annealed for adjusting the pore size and is produced on an organic laminate, ceramics or glass. USE - Method for producing a nanoporous layer useful for the modification of surfaces on microelectronic and micromechanical semiconductor wafer. ADVANTAGE - The method ensures simple and economical production of nanoporous layer with less consumption of materials and improved density, hardness, ductility, direct current conductibility and surfaces characteristics such as liability, adsorption, corrosion and surface diffusion.
Language
de
Patenprio
DE 102007055019 A: 20071114