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Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

Zuverlässigkeit und Degradationsmechanismen von AlGaN/GaN HEMTs für mobile Kommunikationssysteme der nächsten Generation
: Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö.


Microelectronics reliability 49 (2009), No.5, pp.474-477
ISSN: 0026-2714
Reliability of Compound Semiconductors (ROCS) Workshop <2008, Monterey/Calif.>
Journal Article, Conference Paper
Fraunhofer IAF ()
AlGaN/GaN HEMT; reliability; Zuverlässigkeit; recovery; Ausheilung; hot electron; heißes Elektron; trap; Störstelle; CV measurement; CV Messung

Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF stress tests on 8 x 60 µm wide and 0.5 µm long AlGaN/GaN HEMTs at a drain voltage of V(ind d) = 50 V. Drain current recovery measurements after stress indicate that the degradation is partly caused by slow traps generated in the SiN passivation or in the HEMT epitaxial layers. The traps in the SiN passivation layer were characterized using high and low frequency capacitance-voltage (CV) measurements of MIS test structures on thick lightly doped GaN layers.