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Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

: Horstmann, F.; Sittinger, V.; Szyszka, B.


Meinema, H.A.:
7th International Conference on Coatings on Glass and Plastics. ICCG 2008. Advanced Coatings for Large-Area of High-Volume Products. Selected papers : June 15 - 19, 2008, Eindhoven/Veldhoven, The Netherlands
St. Louis/Mo.: Elsevier, 2009 (Thin solid films 517.2009, Nr.10)
ISSN: 0040-6090
International Conference on Coatings on Glass and Plastics (ICCG) <7, 2008, Eindhoven>
Conference Paper, Journal Article
Fraunhofer IST ()

In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. [1]] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min W. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 degrees C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art Fro films which were obtained at optimized direct current magnetron sputtering conditions.