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Managing losses in through silicon vias with different return current path configurations

: Curran, B.; Ndip, I.; Guttovski, S.; Reichl, H.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
EPTC 2008, 10th Electronics Packaging Technology Conference : 9th-12th December 2008, Singapore
New York, NY: IEEE, 2008
ISBN: 978-1-4244-2117-6
ISBN: 978-1-4244-2118-3
Electronics Packaging Technology Conference (EPTC) <10, 2008, Singapore>
Conference Paper
Fraunhofer IZM ()

The high bulk conductivity of silicon, leading to high attenuation, will become a significant challenge for designers of silicon-based system-in-package modules. In this paper, losses in TSV interconnect schemes are quantified with full-wave simulations. Several techniques for optimizing transmission using different return current paths are investigated, including ground shielding vias and two coaxial via structures. Then, a comparison of the losses in structures with different return current paths is made.