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  4. PECVD-ONO: A new deposited firing stable rear surface passivation layer system for crystalline silicon solar cells
 
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2008
Journal Article
Title

PECVD-ONO: A new deposited firing stable rear surface passivation layer system for crystalline silicon solar cells

Abstract
A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-:H, a-:H, and a-:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing) and below 30 cm/s (after forming gas anneal) were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages values extracted from quasi-steady-state photoconductance (QSSPC) measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF) and thermal is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA) has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.
Author(s)
Hofmann, Marc  
Kambor, S.
Schmidt, C.
Grambole, D.
Rentsch, Jochen  
Glunz, Stefan W.  
Preu, Ralf  
Journal
Advances in optoelectronics. Online journal  
Open Access
Link
Link
DOI
10.1155/2008/485467
Additional full text version
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Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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