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Characterization of c-BN coating films with a multiple intermediate layer deposited on cutting tools by r.f. sputtering

: Lee, K.-M.; Oh, D.K.; Lee, K.; Lee, D.; Bewilogua, K.; Park, S.T.; Kim, D.K.; Ahn, H.


Journal of the Korean Physical Society 54 (2009), No.3, pp.1252-1256
ISSN: 0374-4884 (Print)
ISSN: 1976-8524 (Online)
Journal Article
Fraunhofer IST ()

Cubic boron nitride (c-BN) has excellent mechanical properties, such as high hardness, low friction coefficient, high wear resistance and high thermal conductivity. Because of its chemical inertness at high temperatures, a c-BN film has numerous advantages for applications in a wide variety of industrial applications. Presently, c-BN thin films have mostly been synthesized by using physical vapor deposition (PVD) methods, such as r.f. magnetron sputtering, ion-beam-assisted deposition, electron cyclotron resonance chemical vapor deposition (ECR-CVD) and d.c. plasma jet deposition. In this study, the TiAlN/B4C/B-C-N/c-BN multiple intermediate layered film deposition was carried out on (100) silicon wafers and cemented carbide substrates. The films were prepared by an r.f. (13.56 MHz) sputtering process to deposit a film of more than 2 mu m in thicknessand the presence of the TiAlN interlayer made it possible to deposit thick c-BN layers. The TiAlN interlayer improved the adhesion between the cemented carbide substrate and the c-BN layer. The crystal structure and the chemical composition of the films deposited on both substrates were determined by using scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) depth profiling. The chemical bonding of the deposited films was characterized by using X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses.