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High-speed directly and indirectly modulated VCSELs

: Hopfer, F.; Mutig, A.; Strittmatter, A.; Fiol, G.; Moser, P.; Bimberg, D.; Shchukina, V.A.; Ledentsova, N.N.; Lott, J.A.; Quast, H.; Kuntz, M.; Mikhrin, S.S.; Krestnikov, I.L.; Livshits, D.A.; Kovsh, A.R.; Bornholdt, C.


IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
20th International Conference on Indium Phosphide and Related Materials, IPRM 2008 : 25-29 May 2008, Versailles, France
New York, NY: IEEE, 2008
ISBN: 978-1-4244-2258-6
6 pp.
International Conference on Indium Phosphide and Related Materials (IPRM) <20, 2008, Versailles>
Conference Paper
Fraunhofer HHI ()

Recent results on directly modulated VCSELs, including high efficiency 980 nm devices operating error free at 20 Gbit/s without current adjustment between 25 and 85°C, will be reviewed. In addition, a novel electro-optically modulated (EOM) VCSEL concept employing an EOM Bragg reflector based on the Quantum Confined Stark Effect will be proposed and preliminary data presented.