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  4. Phosphorus ion shower implantation for special power IC applications
 
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2000
Conference Paper
Title

Phosphorus ion shower implantation for special power IC applications

Other Title
Ionenschauerimplantation von Phosphor für spezielle Anwendungen in integrierten Hochleistungsschaltungen
Abstract
Ion shower implantation (ISI) shows advantages of both ion implantation and plasma immersion doping and is, therefore, a promising alternative doping method for high dose and low energy implants. Applications of ion shower implantation to power electronics are demonstrated in this paper with special emphasis to low sheet- and contact resistance resulting in improved performance compared to conventional implantation.
Author(s)
Kröner, F.
Schork, R.
Frey, L.
Burenkov, A.  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Ryssel, H.
Mainwork
Ion Implantation Technology 2000. Proceedings  
Conference
International Conference on Ion Implantation Technology (IIT) 2000  
Language
English
IIS-B  
Keyword(s)
  • ion implantation

  • low energy implant

  • high current implanter

  • power electronics

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