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Phosphorus ion shower implantation for special power IC applications

Ionenschauerimplantation von Phosphor für spezielle Anwendungen in integrierten Hochleistungsschaltungen
: Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H.

Ryssel, H. ; Institute of Electrical and Electronics Engineers -IEEE-:
Ion Implantation Technology 2000. Proceedings : International Conference on Ion Implantation Technology : Alpbach, Austria, 17 - 22 September 2000
Piscataway, NJ: IEEE Operations Center, 2000
ISBN: 0-7803-6462-7
ISBN: 978-0-7803-6462-2
International Conference on Ion Implantation Technology (IIT) <13, 2000, Alpbach>
Conference Paper
Fraunhofer IIS B ( IISB) ()
ion implantation; low energy implant; high current implanter; power electronics

Ion shower implantation (ISI) shows advantages of both ion implantation and plasma immersion doping and is, therefore, a promising alternative doping method for high dose and low energy implants. Applications of ion shower implantation to power electronics are demonstrated in this paper with special emphasis to low sheet- and contact resistance resulting in improved performance compared to conventional implantation.