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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Phosphorus ion shower implantation for special power IC applications
Ionenschauerimplantation von Phosphor für spezielle Anwendungen in integrierten Hochleistungsschaltungen
| Ryssel, H. ; Institute of Electrical and Electronics Engineers -IEEE-:
Ion Implantation Technology 2000. Proceedings : International Conference on Ion Implantation Technology : Alpbach, Austria, 17 - 22 September 2000
Piscataway, NJ: IEEE Operations Center, 2000
ISBN: 0-7803-6462-7
ISBN: 978-0-7803-6462-2
pp.476-479 |
| International Conference on Ion Implantation Technology (IIT) <13, 2000, Alpbach> |
|
| English |
| Conference Paper |
| Fraunhofer IIS B ( IISB) () |
| ion implantation; low energy implant; high current implanter; power electronics |
Abstract
Ion shower implantation (ISI) shows advantages of both ion implantation and plasma immersion doping and is, therefore, a promising alternative doping method for high dose and low energy implants. Applications of ion shower implantation to power electronics are demonstrated in this paper with special emphasis to low sheet- and contact resistance resulting in improved performance compared to conventional implantation.