
Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Verfahren zur Herstellung von dotierten Halbleiterbauelementen, insbesondere fuer die Solartechnik
Method for manufacturing doped semiconductor components involves providing semiconductor substrate and doping one side of semiconductor substrate with p- or n- doping
| DE 102007032285 A: 20070711 |
| DE 102007032285 A: 20070711 |
| H01L0031 H01L0021 |
|
| German |
| Patent, Electronic Publication |
| Fraunhofer ISIT () |
Abstract(A1) Die vorliegende Erfindung betrifft ein Verfahren zum Herstellen dotierter Halbleiterbauelemente, bei welchen die Dotierung des Substrats mit Hilfe von Schiebebildern erfolgt. Das Verfahren eignet sich insbesondere zum Einsatz bei der Herstellung von Solarzellen.
DE 102007032285 A1 UPAB: 20090212 NOVELTY - The method involves providing a semiconductor substrate and doping one side of the semiconductor substrate with p- or n -doping. A decal is provided, which is manufactured using a paste of organic binder and a powder such as glass powders or organically modified ceramic powders, which contains doping ions. The decal is applied on the cleaned side of the semiconductor substrate. The semiconductor substrate before endowing is roughened with the help of potassium hydroxide corrosion. USE - Method for manufacturing doped semiconductor components. ADVANTAGE - The semiconductor substrate before endowing is roughened with the help of potassium hydroxide corrosion, and hence improves the operation of the semiconductor components.