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Verfahren zur Herstellung von dotierten Halbleiterbauelementen, insbesondere fuer die Solartechnik

Method for manufacturing doped semiconductor components involves providing semiconductor substrate and doping one side of semiconductor substrate with p- or n- doping
 
: Windbracke, W.; Bernt, H.; Neumann, G.; Futscher, H.

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Frontpage ()

DE 102007032285 A: 20070711
DE 102007032285 A: 20070711
H01L0031
H01L0021
German
Patent, Electronic Publication
Fraunhofer ISIT ()

Abstract
(A1) Die vorliegende Erfindung betrifft ein Verfahren zum Herstellen dotierter Halbleiterbauelemente, bei welchen die Dotierung des Substrats mit Hilfe von Schiebebildern erfolgt. Das Verfahren eignet sich insbesondere zum Einsatz bei der Herstellung von Solarzellen.

 

DE 102007032285 A1 UPAB: 20090212 NOVELTY - The method involves providing a semiconductor substrate and doping one side of the semiconductor substrate with p- or n -doping. A decal is provided, which is manufactured using a paste of organic binder and a powder such as glass powders or organically modified ceramic powders, which contains doping ions. The decal is applied on the cleaned side of the semiconductor substrate. The semiconductor substrate before endowing is roughened with the help of potassium hydroxide corrosion. USE - Method for manufacturing doped semiconductor components. ADVANTAGE - The semiconductor substrate before endowing is roughened with the help of potassium hydroxide corrosion, and hence improves the operation of the semiconductor components.

: http://publica.fraunhofer.de/documents/N-91366.html