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H- and D-related mid-infrared absorption bands in Ga(1-y)In(y)As(1-x)N(x) epitaxial layers

Absorptionsbanden von Ga(1-y)In(1-x)As(1-x)N(x) Epitaxieschichten im mittleren Infrarot in Relation zu Wasserstoff und Deuterium
: Alt, H.C.; Messerer, P.; Köhler, K.; Riechert, H.


Physica status solidi. B 246 (2009), No.1, pp.200-205
ISSN: 0031-8957
ISSN: 0370-1972
Journal Article
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; optical spectroscopy; optische Spektroskopie; infrared; Infrarot

Epitaxially grown ternary and quaternary layers of GaAs based dilute nitrides have been exposed to H+ and D+ ion bombardment to investigate the interaction between hydrogen (deuterium) and nitrogen. Low-temperature Fourier transform infrared absorption measurements reveal the formation of N-H (N-D) complexes by the appearance of high-frequency absorption bands in the mid-infrared due to vibrational modes of H(D). In thin layers, the transformation of isolated substitutional nitrogen, N-As, into complexes involving H (D) is complete, in thick (500-1000 nm) layers only partial. Analyses for the band intensities dependent on variations of the sample structure and parameters during ion irradiation challenge the model of a unique defect associated with the observed vibrational modes. A new model is proposed based to two different N-H (N-D) centers, each involving one H (D) atom.