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Performance modification of SiC MEMS

Modifizieren des Verhaltens von SiC MEMS
: Niebelschütz, F.; Brueckner, K.; Cimalla, V.; Hein, M.A.; Pezoldt, J.


Amador Pérez, T.:
Silicon carbide and related materials 2008 : ECSCRM 2008, selected, peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7 - 11, Barcelona, Spain
Stäfa-Zürich: Trans Tech Publications, 2009 (Materials Science Forum 615-617)
ISBN: 0-87849-334-4
ISBN: 978-0-87849-334-0
European Conference on Silicon Carbide and Related Materials (ECSCRM) <7, 2008, Barcelona>
Conference Paper, Journal Article
Fraunhofer IAF ()
microelectromechanical system; mikromechanisches System; silicon carbide; Siliziumkarbid; stress; Verspannung; oscillator; Oszillator; RF-MEMS

The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the SiC-layers grown on Si(1 1 1) by manipulating the nucleation conditions and growth conditions with Ge deposition prior to the carbonization and epitaxial growth. Previous Raman analysis of the SiC-layers and measured resonant frequencies and quality factors of the processed MEMS show a dependence on the Ge amount at the interface of the Si/SiC heterostructure, which allows to adjust the MEMS properties to the requirements needed for certain applications.