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2008
Conference Paper
Titel
Investigations on the recombination activity of grain boundaries in MC silicon
Abstract
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion length and surface recombination velocity at grain boundaries. Both can be extracted in principle from Laser- and Electron Beam Induced Current measurements (LBIC and EBIC). Multicrystalline floatzone (mc FZ) silicon with different grain sizes was processed to solar cell and characterized by LBIC and EBIC. A theoretical model is used which can be applied to measured LBIC or EBIC profiles in order to obtain values for the effective intra-grain diffusion length and the recombination velocity at grain boundaries. The obtained results are very useful for cost effective small grained mc silicon materials, e.g. Ribbon Growth on Substrate (RGS).