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  4. Numerical simulation of tunnel diodes and multi-junction solar cells
 
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2008
Conference Paper
Title

Numerical simulation of tunnel diodes and multi-junction solar cells

Abstract
In order to connect individual subcells in monolithically grown multi-junction solar cells Esaki interband tunnel diodes are widely used. In this work, numerical simulations of an isolated III-V Esaki tunnel diode and of a dual-junction solar cell are presented. With a tunnel model, which takes into account the full nonlocality of the tunneling process, a good agreement between measured and simulated IV curve of a GaAs tunnel diode could be achieved. Using this model, the EQE and the IV curve of a complete dual-junction solar cell including tunnel diode was simulated. The model is applied to calculate the current-matching condition of the dual-junction cell.
Author(s)
Hermle, Martin  
Philipps, Simon P.  
Létay, Gergö
Bett, Andreas W.  
Mainwork
33rd IEEE Photovolatic Specialists Conference, PVSC 2008. Proceedings. Vol.1  
Conference
Photovoltaic Specialists Conference (PVSC) 2008  
DOI
10.1109/PVSC.2008.4922544
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • III-V-Simulation

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