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Numerical simulation of tunnel diodes and multi-junction solar cells

 
: Hermle, M.; Philipps, S.P.; Letay, G.; Bett, A.W.

:

IEEE Electron Devices Society:
33rd IEEE Photovolatic Specialists Conference, PVSC 2008. Proceedings. Vol.1 : San Diego, CA, May 11 - 16, 2008
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-1640-0
ISBN: 1-4244-1640-X
ISBN: 978-1-4244-1641-7
pp.58-61
Photovoltaic Specialists Conference (PVSC) <33, 2008, San Diego/Calif.>
English
Conference Paper
Fraunhofer ISE ()
III-V-Simulation

Abstract
In order to connect individual subcells in monolithically grown multi-junction solar cells Esaki interband tunnel diodes are widely used. In this work, numerical simulations of an isolated III-V Esaki tunnel diode and of a dual-junction solar cell are presented. With a tunnel model, which takes into account the full nonlocality of the tunneling process, a good agreement between measured and simulated IV curve of a GaAs tunnel diode could be achieved. Using this model, the EQE and the IV curve of a complete dual-junction solar cell including tunnel diode was simulated. The model is applied to calculate the current-matching condition of the dual-junction cell.

: http://publica.fraunhofer.de/documents/N-89820.html