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Memory effect of Ge in III-V semiconductors

: Welser, E.; Guter, W.; Wekkeli, A.; Dimroth, F.


Scholz, F.:
The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy, ICMOVPE XIV : 1 - 6 June, 2008, Metz, France
Amsterdam: Elsevier, 2008 (Journal of crystal growth 310.2008, Nr.23)
International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) <14, 2008, Metz>
Conference Paper, Journal Article
Fraunhofer ISE ()

Epitaxial growth of germanium is attractive for Ge/III-V hetero devices Such as multi-junction solar cells. We investigated the growth of Ge with iso-butyl germane (IBGe) as germanium source and found a strong memory effect in our AlX2600-G3 metalorganic vapor phase epitaxy (MOVPE) reactor. The germanium background led to a higher n-type doping of i-GaAs and strongly reduced the photoluminescence (PL) intensity of Al0.3Ga0.7As and Ga0.5In0.5P. With secondary ion mass spectroscopy (SIMS) the quality of Ge in Al0.3Ga0.7As could be determined to be in the range of 2 X 10(17) cm(-3), whereas a Ge-atom concentration in Ga0.5In0.5P of up to 2 x 10(18) cm(-3) was measured. The memory effect Could be eliminated by changing all contaminated parts inside the MOVPE reactor.