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The growth of thin NiO films on Ag(001) studied by scanning tunneling microscopy and spectroscopy

: Großer, S.; Hagendorf, C.; Neddermeyer, H.; Widdra, W.


Kawai, J.:
Proceedings of the 6th International Symposium on Atomic Level Characterizations for New Materials and Devices, ALC 2007 : Kanazawa, Japan, 28 October - 2 November 2007
Chichester: Wiley, 2008 (Surface and interface analysis 40.2008, Nr.13)
International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC) <6, 2007, Kanazawa>
Conference Paper, Journal Article
Fraunhofer IWM ()

We have used scanning tunneling microscopy and spectroscopy to study the growth of NiO films on Ag(001) at a coverage of 1.5 monolayers. The films have been obtained by reactive deposition of Ni in O-2 atmosphere. Particular attention has been paid to the development of the growth morphology of the deposit as a function of substrate and annealing temperature. For room temperature deposition, the Ag(001) surface is completely covered with the (2 x 1) NiO precursor structure with a thickness of one monolayer and small double-layer NiO islands. The Ag(001) substrate surface is nearly unaffected. Subsequent annealing leads to drastic changes of the morphology of the film. The (2 x 1) precursor structure gradually disappears with annealing time and transforms to double-layer NiO islands. One part of these NiO islands is embedded in the initially flat Ag substrate, and additional Ag islands appear on the surface. Local I/U characteristics (1: tunneling current, U: tunneling bias) have been measured on each kind of island and we found characteristic differences for the various parts of the surface, e.g. for Ag, the (2 x 1) precursor, double-layer and trilayer NiO. These differences can be used to directly map the individual species on the surface.