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Field emission from modified P-doped diamond surfaces with different barrier heights

Feldemission modifizierter Oberflächen von Phosphor-dotiertem Diamant mit unterschiedlichen Austrittsarbeiten
: Kudo, Y.; Yamada, T.; Yamaguchi, H.; Masuzawa, T.; Saito, I.; Shikata, S.-i.; Nebel, C.E.


Japanese journal of applied physics 47 (2008), No.12, pp.8921-8924
ISSN: 0021-4922
ISSN: 1347-4065
Journal Article
Fraunhofer IAF ()
field emission; Feldemission; P-doped diamond; Phosphor-dotierter Diamant; surface termination; barrier height; electron affinity

In this study, the field emission properties of P-doped diamond with various surface treatments were measured in order to understand the effects of surface treatments on the barrier height. The emission properties were acquired for diamond with C-reconstructed, oxidized, and H-plasma treated surfaces. The voltage drop across the vacuum was estimated for each surface, using threshold voltage-anode distance (V-d) measurement. The estimated electric fields near the diamond surface were 4.95, 26.6, and 54.1 V/mm for the C-reconstructed, oxidized, and H-plasma treated surfaces, respectively. The barrier height ratio of these surfaces derived from their electric fields was 1 : 3:1 : 4:9, which agrees with the result derived from Fowler-Nordheim plots. Considering the electron affinities of all surfaces and the obtained results, positive electron affinities dominate the field emission properties of the C-reconstructed and oxidized surfaces. An internal barrier due to upward band bending on the H-plasma treated surface limits the field emission properties, even though it has a negative electron affinity. Our results suggest that the emission properties strongly depend on the barrier height, which is modified by surface treatment.