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Sputtering yield amplification for targets operated in reactive mode

: Kubart, T.; Nyberg, T.; Pflug, A.; Kohl, D.; Wuttig, M.; Berg, S.

Gryse, R. de:
ICTF14 & RSD 2008, 14th International Conference on Thin Films & Reactive Sputter Deposition 2008. Proceedings : 17th to 20th November 2008, Ghent
Ghent, 2008
International Conference on Thin Films (ICTF) <14, 2008, Ghent>
Reactive Sputter Deposition Symposium (RSD) <2008, Ghent>
Conference Paper
Fraunhofer IST ()

In this work, we present simulations of the partial sputtering yields for individual elements in multielement targets sputtered in a reactive atmosphere. It has been previously demonstrated that it is possible to significantly increase the sputtering rate from a target by doping if with a few percent of a heavier element. This phenomenon is referrend to as the sputtering yoield amplification effect and is investigated for oxide depositions here. The Monte Carlo based TRIDYN computer code has been used for the simulations. We have used this code to find out optimum doping conditions to obtain maximum partial sputtering yield for different target materials. In particular, we have focused on the deposition process for TiO2. The maximum sputtering yields from metal and oxide target are dissuced. Further, the influence of the sputtering yield amplification on the hysteresis behaviour is analyzed. The results indicate that a substantial increase in the deposition rate may be achieved for Ti. The transition between metal and compound mode is shifted torwards higher oxygen flows as a result of the increased yield. Substoichiometic targets are suggested as a way of accomplishing hysteresis free deposition process that takes the full advantage of increased yield.