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The response rate of room temperature terahertz InGaAs-based bow-tie detector with broken symmetry

Die Reaktionsrate eines InGaAs Terahertz Detektors in Fliegeform bei Zimmertemperatur mit gebrochener Symmetrie
: Kasalynas, I.; Seliuta, D.; Simniskis, R.; Tamosiunas, V.; Vaicikauskas, V.; Grigelionis, I.; Nedzinskas, R.; Köhler, K.; Valusis, G.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
33rd International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2008. Vol.2 : 16th International Conference on Terahertz Electronics; 15.-19.9.2008 Pasadena, California, USA
New York, NY: IEEE, 2008
ISBN: 978-1-4244-2120-6
ISBN: 978-1-4244-2119-0
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) <33, 2008, Pasadena/Calif.>
International Conference on Terahertz Electronics <16, 2008, Pasadena/Calif.>
Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; heterostructure; Heterostruktur; electrical property; elektrische Eigenschaft

A bow-tie InGaAs with broken symmetry has been designed for terahertz detection at room temperature. An active part of the detector consists of a two-dimensional electron gas which is heated non-uniformly with incident radiation. Main detector performances are operation in a passive scheme, flat frequency response up to 1 THz, the voltage sensitivity of about 5 V/W, the noise equivalent power of roughly 10 nW/Hz(exp 1/2), and the response time less then 7 ns.