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  4. The response rate of room temperature terahertz InGaAs-based bow-tie detector with broken symmetry
 
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2008
Conference Paper
Title

The response rate of room temperature terahertz InGaAs-based bow-tie detector with broken symmetry

Other Title
Die Reaktionsrate eines InGaAs Terahertz Detektors in Fliegeform bei Zimmertemperatur mit gebrochener Symmetrie
Abstract
A bow-tie InGaAs with broken symmetry has been designed for terahertz detection at room temperature. An active part of the detector consists of a two-dimensional electron gas which is heated non-uniformly with incident radiation. Main detector performances are operation in a passive scheme, flat frequency response up to 1 THz, the voltage sensitivity of about 5 V/W, the noise equivalent power of roughly 10 nW/Hz(exp 1/2), and the response time less then 7 ns.
Author(s)
Kasalynas, I.
Seliuta, D.
Simniskis, R.
Tamosiunas, V.
Vaicikauskas, V.
Grigelionis, I.
Nedzinskas, R.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Valusis, G.
Mainwork
33rd International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2008. Vol.2  
Conference
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) 2008  
International Conference on Terahertz Electronics 2008  
DOI
10.1109/ICIMW.2008.4665701
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • III-V semiconductor

  • III-V Halbleiter

  • heterostructure

  • Heterostruktur

  • electrical property

  • elektrische Eigenschaft

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