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High-peak power strain-compensated GaInAs/AlInAs quantum cascade lasers (lambda~4.6µm) based on a slightly diagonal active region design

Verspannungskompensierte Hoch-Spitzenleistungs-GaInAs/AlInAs-Quantenkaskadenlaser (lambda~4,6µm) basierend auf einem leicht diagonalen Aktivbereich
: Yang, Q.K.; Lösch, R.; Bronner, W.; Hugger, S.; Fuchs, F.; Aidam, R.; Wagner, J.


Applied Physics Letters 93 (2008), No.25, Art. 251110, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
high power; Hochleistung; quantum cascade laser; Quantenkaskadenlaser; slightly-diagonal design; leicht diagonaler Aktivbereich

Employing a "slightly diagonal" active region design for the quantum cascade lasers compared to a reference sample based on the conventional vertical transition design [R. Köhler et al., Appl. Phys. Lett. 76, 1092 (2000)], we have improved the maximum operation temperature, room-temperature maximum peak power per facet, and room-temperature slope efficiency from 320 K, 200 mW, and 570 mW/A to higher than 360 K, 3.2 W, and 2200 mW/A, respectively, for the device size of 16 µmX3 mm with as-cleaved facets operated in pulsed mode.