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2008
Conference Paper
Titel
Multiple-throw millimeter-wave FET switches for frequencies from 60 up to 120 GHz
Alternative
FET-basierte Millimeterwellen-Mehrfachschalter für Frequenzen von 60 bis zu 120 Ghz
Abstract
This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication fontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60 and 94 GHz, respectively. Rivalled only by PIN diode switches, an insertion loss of <2 dB is demonstrated up to 120 GHz. Shorted stubs are used to compensate for parasitic FET capacitance and allow for matching. Linearity data is presented for 60 and 94 GHz SPDT switches. A comprehensive comparison with state-of-the-art planar SPDT switches is included. A 2:6 switch network for multi-antenna transceivers achieves <4 dB insertion loss at 60 GHz.
Author(s)
Language
English