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GaN MMIC based T/R-module front-end for X-band applications

Gallium-Nitrid-basiertes T/R Modul Front-End für Anwendungen im X-Band
 
: Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M.

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Gallium Arsenide Application Symposium Association -GAAS-; Institute of Electrical and Electronics Engineers -IEEE-; European Microwave Association:
3rd European Microwave Integrated Circuits Conference 2008. Proceedings : Held in Amsterdam, from 27 to 31 October 2008 as part of European Microwave Week 2008, EuMW
New York, NY: IEEE, 2008
ISBN: 978-2-87487-007-1
pp.274-277
European Microwave Integrated Circuits Conference (EuMIC) <3, 2008, Amsterdam>
European Microwave Week (EuMW) <11, 2008, Amsterdam>
English
Conference Paper
Fraunhofer IAF ()
AlGaN/GaN; HEMT; FET; GaN HEMT; power amplifier; Leistungsverstärker; TRX-module

: http://publica.fraunhofer.de/documents/N-86395.html