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Balanced microstrip AlGaN/GaN HEMT power amplifier MMIC for X-band applications

Balanzierte Mikrostreifen AlGaN/GaN HEMT Leistungsverstärker für Anwendungen im X-Band
: Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thumm, M.


Gallium Arsenide Application Symposium Association -GAAS-; Institute of Electrical and Electronics Engineers -IEEE-; European Microwave Association:
3rd European Microwave Integrated Circuits Conference 2008. Proceedings : Held in Amsterdam, from 27 to 31 October 2008 as part of European Microwave Week 2008, EuMW
New York, NY: IEEE, 2008
ISBN: 978-2-87487-007-1
European Microwave Integrated Circuits Conference (EuMIC) <3, 2008, Amsterdam>
European Microwave Week (EuMW) <11, 2008, Amsterdam>
Conference Paper
Fraunhofer IAF ()
AlGaN/GaN HEMT; balanced power amplifier; balancierter Leistungsverstärker; power-added efficiency; Wirkungsgrad; MMIC; Lange coupler; Lange-Koppler

This paper describes a balanced AlGaN/GaN HEMT single-stage power amplifier demonstrator for X-band frequencies in microstrip line technology on thinned s.i. SiC substrates. The design features a modular circuit concept and microstrip MMIC directional couplers with low impedance levels. These 3 dB-couplers designed for a center frequency of 10 GHz show a coupling factor of 3.5 dB ± 0.4 dB and a low net insertion loss of 0.3 dB. The balanced amplifier reaches 11 W pulsed output power at 3 dB compression level and a maximum gain of 10 dB at 8.56 GHz with an input and output match of a better than 14 dB from 8.3 to 13 GHz. This 0°/90° balanced microstrip AlGaN/GaN HEMT power amplifier MMIC demonstrator may be an interesting alternative to existing hybrid solutions.