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35 nm metamorphic HEMT MMIC technology

35 nm metamorphe HEMT MMIC Technologie
 
: Leuther, A.; Tessmann, A.; Massler, H.; Lösch, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.

:

IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
20th International Conference on Indium Phosphide and Related Materials, IPRM 2008 : 25-29 May 2008, Versailles, France
New York, NY: IEEE, 2008
ISBN: 978-1-4244-2258-6
4 pp.
International Conference on Indium Phosphide and Related Materials (IPRM) <20, 2008, Versailles>
English
Conference Paper
Fraunhofer IAF ()
MHEMT; InGaAs/InAlAs heterostructure; InGaAs/InAlAs Heterostruktur; S-MMIC; submillimeter-wave monolithic integrated circuit

Abstract
A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm2/Vs and 6.1x10(exp 12) cm-2, respectively. To enable a maximum extrinsic transconductance g(ind m, max) of 2500 mS/mm the source resistance has been reduced to 0.1 ohm mm. An f(ind t) of 515 GHz was achieved for a 2 x 10 µm device. Based on this advanced 35 nm mHEMT technology very compact single-stage H-band amplifiers circuits have been realized demonstrating a high small-signal gain of more than 7 dB at 270 GHz.

: http://publica.fraunhofer.de/documents/N-86342.html