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An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers

Ein verbessertes Konzept des aktiven Bereichs für die Realisierung von hocheffizienten, in-well-gepumpten Halbleiter-Scheibenlasern auf der Basis von GaSb
: Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.


Applied Physics Letters 93 (2008), No.18, Art. 181113, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
infrared laser; Infrarot-Laser; semiconductor laser; Halbleiterlaser; semiconductor disc laser; Halbleiter-Scheibenlaser; surface emitting laser; oberflächenemittierender Laser; VECSEL; GaSb; (AlGaIn)(AsSb)

An improved active region concept for GaSb-based optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) is presented. The concept is based on Ga(x)In(1-x)As(y)Sb(1-y) quantum wells embedded between AlAs(y)Sb(1-y) barrier layers designed for optical in-well pumping. Advantages of this concept are a high modal gain, the suppression of thermal leakage currents, and an improved thermal conductivity of the active region compared to a conventional GaInAsSb/AlGaAsSb active region design. An in-well pumped VECSEL emitting at 2.24 µm has been realized according to this concept, yielding at a heatsink temperature of 20 °C in continuous-wave operation a power slope efficiency of more than 32% and an absorption of the 1.96 µm pump light of more than 50% without pump recycling.