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  4. High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xµm wavelength range
 
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2008
Conference Paper
Title

High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xµm wavelength range

Other Title
Leistungsstarke optisch gepumpte GaSb-basierende Halbleiter-Scheibenlaser für den 2.Xµm Wellenlängenbereich
Abstract
We report on recent advances in the performance of GaSb-based optically pumped semiconductor disk lasers (OPSDLs), emitting in the 2.0 - 2.3 µm wavelength range. Both barrier pumped OPSDL (using 980 nm laser diodes as pump source) and in-well pumped OPSDL (using 1.96 µm pump radiation) have been fabricated and characterized. Using alternative SiC or diamond intracavity heatspreader, multiple-watt CW-output powers have been achieved (e.g. >3W at 2.3 µm and >5W at 2.0 µm), with power efficiencies in the range of 18 % - 25 %. For an optimised resonator setup, the beam profile is close to the diffraction limit with M(exp 2) values around 1.2; and even for the highest power levels, M(exp 2) is in the range of 2-5.
Author(s)
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schulz, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rösener, B.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Manz, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hopkins, J.-M.
Burns, D.
Mainwork
Solid state lasers XVII. Technology and devices  
Conference
Conference "Solid State Lasers - Technology and Devices" 2008  
DOI
10.1117/12.762873
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • III-V semiconductor

  • III-V Halbleiter

  • infrared

  • Infrarot

  • single mode

  • Grundmode

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