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High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xµm wavelength range

Leistungsstarke optisch gepumpte GaSb-basierende Halbleiter-Scheibenlaser für den 2.Xµm Wellenlängenbereich
: Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.


Clarkson, W.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Solid state lasers XVII. Technology and devices : 20 - 24 January 2008, San Jose, California, USA
Bellingham, WA: SPIE, 2008 (SPIE Proceedings Series 6871)
ISBN: 978-0-8194-7046-1
ISSN: 0277-786X
Paper 68710Z
Conference "Solid State Lasers - Technology and Devices" <17, 2008, San Jose/Calif.>
Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; infrared; Infrarot; single mode; Grundmode

We report on recent advances in the performance of GaSb-based optically pumped semiconductor disk lasers (OPSDLs), emitting in the 2.0 - 2.3 µm wavelength range. Both barrier pumped OPSDL (using 980 nm laser diodes as pump source) and in-well pumped OPSDL (using 1.96 µm pump radiation) have been fabricated and characterized. Using alternative SiC or diamond intracavity heatspreader, multiple-watt CW-output powers have been achieved (e.g. >3W at 2.3 µm and >5W at 2.0 µm), with power efficiencies in the range of 18 % - 25 %. For an optimised resonator setup, the beam profile is close to the diffraction limit with M(exp 2) values around 1.2; and even for the highest power levels, M(exp 2) is in the range of 2-5.