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Assessment of a lasersingulation process for Si-wafers with metallized back side and small die size

: Theuss, H.; Koller, A.; Kröninger, W.; Schoenfelder, S.; Petzold, M.


IEEE Components, Packaging, and Manufacturing Technology Society; Electronic Components, Assemblies, and Materials Association:
58th Electronic Components and Technology Conference 2008. Proceedings. Vol.3 : Lake Buena Vista, FL, 27 - 30 May 2008
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-2230-2
Electronic Components and Technology Conference (ECTC) <58, 2008, Lake Buena Vista/Fla.>
Conference Paper
Fraunhofer IWM ()
Waferfertigung; Chip-Vereinzelung; Lasertrennen; Sägeprozess; LED; Silizium; Festigkeit

We report on the development of a dry lasersingulation process for Si-wafers with back side metallization targeting small die sizes below 0.07 mm2. The dicing technology aims at improved manufacturing of diodes with thicknesses ranging from approx. 100 µm to 150 µm, die sizes down to 230 x 230 µm2 and metallized back side metallization layers used for solder die attach. We discuss the impact of the laser process on subsequent assembly processes as well as on the die itself. Particular emphasis is set on the laser induced modification of the mechanical properties within the wafer, e. g. the reduction of the die strength. For the wafer technology under evaluation, the laser process is considered to be superior to standard blade dicing approaches.