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(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors

(AlGaIn)N UV LEDs für integrierte metall-oxid basierte Ozonsensoren
 
: Wagner, J.; Wang, C.Y.; Röhlig, C.-C.; Maier, M.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Cimalla, V.; Köhler, K.; Ambacher, O.

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Streubel, K.P. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Light-emitting diodes: research, manufacturing, and applications XII : 22 - 24 January 2008, San Jose, California, USA
Bellingham, WA: SPIE, 2008 (SPIE Proceedings Series 6910)
ISBN: 978-0-8194-7085-0
Paper 69100X
Conference "Light-Emitting Diodes - Research, Manufacturing, and Applications" <12, 2008, San Jose/Calif.>
English
Conference Paper
Fraunhofer IAF ()
(AlGaIn)N UV LED; nahe UV-LED; near UV LED; ozone sensor; Ozonsensor; integrierter Sensor; integrated sensor

Abstract
There is high demand for compact low-cost ozone (O3) sensors. It has been shown that indium oxide (In2O3) thin films grown by metal-organic vapor-phase epitaxy (MOVPE) act as an O3 sensitive material, which can be activated at room-temperature by ultraviolet (UV) light. In the present work we integrated the In2O3 sensing thin film and an (AlGaIn)N based near-UV LED back-to-back on a single sensor chip. The integrated in2O3 film-LED sensor was exposed to varying ozone concentrations ranging from 38 ppb to 726 ppb and found to be sensitive to even the lowest O3 concentration.

: http://publica.fraunhofer.de/documents/N-85744.html