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High-brightness quantum well and quantum dot tapered lasers

Hochbrilliante Quantenfilm- und Quantenpunktlaser
 
: Michel, N.; Krakowski, M.; Hassiaoui, I.; Calligaro, M.; Lecomte, M.; Parillaud, O.; Weinmann, P.; Zimmermann, C.; Kaiser, W.; Kamp, M.; Forchel, A.; Pavelescu, E.-M.; Reithmaier, J.-P.; Sumpf, B.; Erbert, G.; Kelemen, M.; Ostendorf, R.; García-Tijero, J.-M.; Odriozola, H.; Esquivias, I.

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Belyanin, A.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Novel in-plane semiconductor lasers VII : 21 - 24 January 2008, San Jose, California, USA
Bellingham, WA: SPIE, 2008 (SPIE Proceedings Series 6909)
ISBN: 978-0-8194-7084-3
ISSN: 0277-786X
Paper 690918
Conference "Novel In-Plane Semiconductor Lasers" <7, 2008, San Jose/Calif.>
English
Conference Paper
Fraunhofer IAF ()
high brightness; hohe Brillianz; high power; hohe Leistung; diode laser; Diodenlaser; semiconductor laser; Halbleiterlaser; tapered laser; Trapezlaser; AlGaAs-InGaAs

Abstract
Several types of high-brightness near-infrared tapered quantum well and quantum dots tapered lasers are reviewed and compared. Recent developments include record-high brightness quantum well tapered lasers at 810 nm and 975 nm (up to 8.3 W CW, diffraction limited), high wall-plug efficiency gain-guided and index-guided tapered lasers (up to 57%), narrow slow axis far-field (2.5° FWHM) index-guided tapered lasers at 975 nm, wavelength-stable (down to 0.09 nm/K), high-brightness quantum dots tapered lasers at 920 and 975 nm, and quantum dots tapered lasers bars (up to 14 W CW) at 920 nm, with narrow far-field in the slow axis (3° FWHM).

: http://publica.fraunhofer.de/documents/N-85743.html