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2008
Journal Article
Titel
Metamorphic HEMT MMICs and modules for use in a high-bandwidth 210 GHz radar
Alternative
Schaltkreise und Module basierend auf einer metamorphen HEMT Technologie für den Einsatz in einem 210 GHz Radarsystem mit hoher Bandbreite
Abstract
In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized using our 0.1 µm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 210 GHz low-noise amplifier MMIC was fabricated using our advanced 0.05 mum mHEMT technology. To package the circuits, a set of waveguide-to-microstrip transitions has been realized on 50 mum thick quartz substrates, covering the frequency range between 75 and 220 GHz. The presented millimeter-wave components were developed for use in a novel 210 GHz radar demonstrator COBRA-210, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm.
Author(s)
Tags
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dual-gate FET
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Dual-Gate-Transistor
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frequency multiplier
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Frequenzvervielfacher
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G-Band
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grounded coplanar waveguide
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rückseitenmetallisierte Koplanarleitung
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high-power amplifier
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Leistungsverstärker
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HPA
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inverse synthetic aperture radar (ISAR)
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inverses synthetisches Apertur Radar
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low-noise amplifier
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rauscharmer Verstärker
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LNA
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metamorphic high electron mobility transistor
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MHEMT
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millimeter-wave monolithic integrated circuit
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integrated circuit
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MMIC
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subharmonically pumped mixer
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subharmonischer Mischer
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W-Band