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A metamorphic 220-320 GHz HEMT amplifier MMIC

Ein metamorpher 220 bis 320 GHz HEMT-Verstärkerschaltkreis
 
: Tessmann, A.; Leuther, A.; Massler, H.; Kuri, M.; Lösch, R.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2008 : 12-15 Oct. 2008, Monterey/Calif.
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-1939-5
ISBN: 978-1-4244-1940-1
pp.31-34
Compound Semiconductor Integrated Circuit Symposium (CSIC) <30, 2008, Monterey/Calif.>
English
Conference Paper
Fraunhofer IAF ()
Cascode-Transistor; Kaskodentransistor; grounded coplanar waveguide; rückseitenmetallisierte Koplanarleitung; GCPW; H-band; low-noise amplifier (LNA); rauscharmer Verstärker; metamorphic high electron mobility transistor; MHEMT; submillimeter-wave monolithic integrated circuit; S-MMIC

Abstract
In this paper, we present the development of a compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation active and passive high-resolution imaging systems. The low-noise amplifier (LNA) circuit has been realized using an advanced 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and achieves a small-signal gain of 13.5 dB at 300 GHz and a linear gain of more than 10.5 DB over the bandwidth from 220 to 320 GHz. The use of grounded coplanar waveguide (GCPW) topology in combination with cascode transistors resulted in a very compact die size of only 0.43 x 0.82 mm2.

: http://publica.fraunhofer.de/documents/N-85605.html