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Terahertz emission from a large-area GaInAsN emitter

Terahertz Emission eines großflächigen GaInAsN-Emitters
: Peter, F.; Winnerl, S.; Schneider, H.; Helm, M.; Köhler, K.


Applied Physics Letters 93 (2008), No.10, Art. 101102, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; terahertz emitter; Terahertz-Sender; time-resolved spectroscopy; zeitaufgelöste Spektroskopie

A large-area interdigitated terahertz emitter based on molecular-beam epitaxy grown GaInAsN with an additional AlGaAs heterostructure is investigated as a terahertz source for excitation wavelengths between 1.1 and 1.5 mu m. The optical and electrical properties of the emitter material exhibit absorption up to a wavelength of 1.5 mu m and have a resistivity of 550 k Omega cm. Terahertz waves were detected by electro-optical sampling with a bandwidth exceeding 2 THz. Best performance is found for excitation wavelengths below 1.35 mu m. Furthermore the emission properties for several excitation powers are investigated, showing a linear increase in terahertz emission.